為突破大尺寸碳化硅（SiC）晶圓在生長效率、均勻性控制及成本方面的關鍵瓶頸，山東力冠微電子裝備有限公司近日正式發(fā)布其12英寸PVT電阻設備及8英寸多坩堝設備。為8-12英寸SiC晶圓的規(guī)模化、穩(wěn)定化、低成本制備樹立了新的行業(yè)標桿。

設備升級亮點聚焦

 

 

 

 

 

 

12英寸PVT電阻爐：直指規(guī)?；慨a痛點

產能躍升：單爐次生長效率提升達40%，顯著加速12英寸SiC晶圓的產業(yè)化落地步伐。

均勻性保障：集成先進多溫區(qū)精準控制技術，有效確保晶格質量與厚度一致性，滿足嚴苛的量產質量要求。

 

 

             山東力冠12英寸PVT電阻爐

 

 

 

 

 

 

8英寸多坩堝方案：降本提效的關鍵引擎
效率倍增，成本銳減：

采用3-5個坩堝同步生長，單次產出能力成倍提升，大幅攤薄晶錠的制造成本。

智能精準控制：創(chuàng)新的硬件架構與自主研發(fā)的智能控制軟件深度融合，實現高精度溫度與真空壓力動態(tài)調控。

突破熱場均勻性：獨家多坩堝協同溫場技術，系統性解決傳統超大尺寸設備長期存在的熱場分布不均問題。

保障工藝穩(wěn)定性：高度自動化控制系統最大限度減少人為干預，確保生產過程的高良率與批次一致性。

市場拓展與創(chuàng)新驅動

 

 

 

 

 

 

 

山東力冠微電子裝備憑借其深厚的技術積淀和快速響應的市場策略，已與國內多家頭部半導體企業(yè)建立起深度合作關系，并正積極拓展全球市場，國際影響力穩(wěn)步提升。

展望未來，山東力冠微電子裝備將持續(xù)聚焦大尺寸、高性價比PVT設備的研發(fā)與迭代，致力于通過核心設備的技術突破，提升全球SiC產業(yè)鏈的效率與韌性，促進供應鏈多元化發(fā)展，為半導體材料的革新與廣泛應用持續(xù)提供關鍵動能。

Shandong Liguan Microelectronics Equipment Co., Ltd. Upgrades PVT Equipment, Pioneering High-Efficiency Mass Production of 8-12-Inch SiC Wafers

To address the key bottlenecks in the growth efficiency, uniformity control, and cost of large-size silicon carbide (SiC) wafers, Shandong Liguan Microelectronics Equipment Co., Ltd. has officially launched its 12-inch PVT resistance equipment and 8-inch multi-crucible equipment. This breakthrough sets a new industry benchmark for the large-scale, stable, and low-cost production of 8-12 inch SiC wafers.

Highlights of Equipment Upgrades

12-inch PVT Resistance Furnace: Targeting Mass Production Challenges

Capacity Leap: Single-run growth efficiency increased by 40%, significantly accelerating the industrialization of 12-inch SiC wafers.

Uniformity Assurance: Equipped with advanced multi-zone precision temperature control, ensuring consistent lattice quality and thickness to meet stringent mass production standards.

Shandong Liguan Microelectronics Equipment Co., Ltd. 12-inch PVT Resistance Furnace

8-Inch Multi-Crucible Solution: The Key Engine for Cost Reduction and Efficiency Improvement

Efficiency Doubled, Costs Sharply Reduced:
By utilizing 3-5 crucibles for simultaneous crystal growth, single-run production capacity is multiplied, significantly reducing the manufacturing cost per wafer.

Intelligent Precision Control:
Innovative hardware architecture combined with proprietary intelligent control software enables high-precision dynamic regulation of temperature and vacuum pressure.

Breakthrough in Thermal Field Uniformity:
Exclusive multi-crucible cooperative thermal field technology systematically addresses the long-standing issue of uneven heat distribution in traditional large-scale equipment.

Ensuring Process Stability:
A highly automated control system minimizes human intervention, guaranteeing high yield rates and batch-to-batch consistency.

Market Expansion and Innovation-Driven Growth

Shandong Liguan Microelectronics Equipment Co., Ltd. leveraging its profound technological expertise and agile market strategy, has established deep partnerships with multiple leading domestic semiconductor enterprises. The company is now actively expanding its global footprint, with steadily growing international influence.

Looking ahead, Shandong Liguan Microelectronics Equipment Co., Ltd. will remain committed to the R&D and iteration of large-scale, cost-effective PVT equipment. By driving breakthroughs in core technologies, the company aims to enhance the efficiency and resilience of the global SiC supply chain, promote supply chain diversification, and provide critical momentum for the innovation and widespread adoption of semiconductor materials.